The MJE271 is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It has a maximum power dissipation of 1.5W and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-225-3 case and is available in bulk quantities of 500 units.
PackageTO-225-3
Current Rating-2A
PolarityPNP
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Technical Specifications
Onsemi MJE271 technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 6MHz |
| hFE Min | 500 |
| Lead Free | Contains Lead |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 6MHz |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJE271 Datasheet
Download the complete datasheet for Onsemi MJE271 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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