PNP Darlington Bipolar Power Transistor featuring a 100V Collector-Emitter Voltage (VCEO) and a 2A Continuous Collector Current. This device offers a minimum DC current gain (hFE) of 500 and a transition frequency of 6MHz. Packaged in TO-225, it operates within a temperature range of -65°C to 150°C and is RoHS compliant.
PackageTO-225-3
Current Rating-2A
PolarityPNP
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Technical Specifications
Onsemi MJE271G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Continuous Collector Current | 5A |
| Current Rating | -2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 6MHz |
| Halogen Free | Halogen Free |
| hFE Min | 500 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.5W |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 6MHz |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE271G Datasheet
Download the complete datasheet for Onsemi MJE271G to view detailed technical specifications.
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