
PNP Bipolar Junction Transistor (BJT) for power applications. Features a 60V collector-emitter voltage (VCEO) and a continuous collector current rating of 10A. Offers a maximum power dissipation of 75W and a transition frequency of 2MHz. Packaged in a TO-220-3 through-hole mount, this RoHS compliant component operates from -55°C to 150°C.
Onsemi MJE2955TTU technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | -70V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | -1.1V |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 8V |
| Current Rating | -10A |
| Emitter Base Voltage (VEBO) | -5V |
| Frequency | 2MHz |
| Gain Bandwidth Product | 2MHz |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 600mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| DC Rated Voltage | -60V |
| Weight | 1.8g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJE2955TTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
