NPN Bipolar Junction Transistor (BJT) for power applications. Features a 200V collector-emitter breakdown voltage and a 500mA maximum collector current. Offers a 20W power dissipation and a 15MHz transition frequency. Packaged in TO-225 with a lead-free, RoHS-compliant construction.
Frequency15MHz
PackageTO-225-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi MJE344G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 15MHz |
| Gain Bandwidth Product | 15MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Frequency | 15MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | NPN |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 15MHz |
| DC Rated Voltage | 120V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE344G Datasheet
Download the complete datasheet for Onsemi MJE344G to view detailed technical specifications.
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