PNP Bipolar Junction Transistor (BJT) with a 300V collector-emitter breakdown voltage and 300V collector-emitter voltage. Features a maximum collector current of 500mA and a power dissipation of 20W. Housed in a TO-225 package, this lead-free transistor operates from -65°C to 150°C. Includes a minimum hFE of 30 and is RoHS compliant.
PackageTO-225-3
Current Rating-500mA
PolarityPNP
Power20W
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Technical Specifications
Onsemi MJE350G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 3V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 300V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 3V |
| Height | 11.04mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 7.74mm |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 20W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -300V |
| Width | 2.66mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE350G Datasheet
Download the complete datasheet for Onsemi MJE350G to view detailed technical specifications.
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