The MJE371G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 4A. It is packaged in a TO-225-3 case and is compliant with RoHS regulations. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It is suitable for use in a variety of applications, including general-purpose switching and amplification.
PackageTO-225-3
Current Rating-4A
PolarityPNP
Power4W
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Technical Specifications
Onsemi MJE371G technical specifications.
General
| Package/Case | TO-225-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 40V |
| Current Rating | -4A |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Collector Current | 4A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | PNP |
| Power Dissipation | 4W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE371G Datasheet
Download the complete datasheet for Onsemi MJE371G to view detailed technical specifications.
No datasheet is available for this part.