PNP Bipolar Junction Power Transistor in a TO-220-3 package. Features a 375V Collector-Emitter Voltage (VCEO) and a 350V Collector Base Voltage (VCBO). Offers a maximum collector current of 1A and a power dissipation of 40W. Exhibits a minimum DC current gain (hFE) of 30 and a transition frequency of 10MHz. Operates across a temperature range of -65°C to 150°C.
Frequency10MHz
PackageTO-220-3
Current Rating-1A
PolarityPNP
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Technical Specifications
Onsemi MJE5731A technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 375V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 375V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 1A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 40W |
| RoHS Compliant | No |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -375V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MJE5731A Datasheet
Download the complete datasheet for Onsemi MJE5731A to view detailed technical specifications.
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