PNP Bipolar Junction Transistor (BJT) with a 350V Collector-Emitter Voltage (VCEO) and 1A Max Collector Current. Features a 40W Power Dissipation, 10MHz Transition Frequency, and a TO-220-3 package. Operates from -65°C to 150°C and is RoHS compliant.
Frequency10MHz
PackageTO-220-3
Current Rating-1A
PolarityPNP
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Technical Specifications
Onsemi MJE5731G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 350V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -1A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 10MHz |
| Gain Bandwidth Product | 10MHz |
| Height | 15.75mm |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Breakdown Voltage | 350V |
| Max Collector Current | 1A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 40W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 40W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MJE5731 |
| Transition Frequency | 10MHz |
| DC Rated Voltage | -350V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE5731G Datasheet
Download the complete datasheet for Onsemi MJE5731G to view detailed technical specifications.
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