PNP Bipolar Junction Transistor (BJT) with a 400V Collector-Emitter Breakdown Voltage and 8A Max Collector Current. Features a TO-220-3 package, 80W Power Dissipation, and a maximum operating temperature of 150°C. Collector Base Voltage is 450V, and Collector Emitter Saturation Voltage is 2V. This RoHS compliant component is supplied in a 50-piece tube.
PackageTO-220-3
Current Rating-8A
PolarityPNP
Power80W
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Technical Specifications
Onsemi MJE5852G technical specifications.
General
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 450V |
| Collector Emitter Breakdown Voltage | 400V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 400V |
| Collector-emitter Voltage-Max | 5V |
| Current Rating | -8A |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 9.28mm |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Length | 10.28mm |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 80W |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 80W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | SWITCHMODE™ |
| DC Rated Voltage | -400V |
| Width | 4.82mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJE5852G Datasheet
Download the complete datasheet for Onsemi MJE5852G to view detailed technical specifications.
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