
PNP Bipolar Power Transistor featuring a TO-220-3 package. Offers a maximum collector current of 10A and a collector-emitter breakdown voltage of 350V. Key specifications include a collector-emitter voltage (VCEO) of 80V, a maximum power dissipation of 36W, and a minimum hFE of 40. This RoHS compliant component operates within a temperature range of -55°C to 150°C.
Onsemi MJF45H11G technical specifications.
| Package/Case | TO-220-3 |
| Collector Base Voltage (VCBO) | 5V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 41A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 40MHz |
| Height | 0.635inch |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 0.418inch |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 36W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -80V |
| Width | 0.193inch |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MJF45H11G to view detailed technical specifications.
No datasheet is available for this part.