NPN Bipolar Junction Transistor (BJT) with a 250V Collector-Emitter Voltage (VCEO) and a maximum collector current of 16A. Features a 400V Collector-Base Voltage (VCBO) and a 4MHz transition frequency. Packaged in a TO-247-3 case, this component offers a maximum power dissipation of 200W and operates within a temperature range of -65°C to 150°C. It is RoHS compliant and lead-free.
Frequency4MHz
PackageTO-247-3
Current Rating16A
PolarityNPN
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Technical Specifications
Onsemi MJW21196G technical specifications.
General
| Package/Case | TO-247-3 |
| Collector Base Voltage (VCBO) | 400V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 16A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 4MHz |
| Gain Bandwidth Product | 4MHz |
| Height | 21.08mm |
| hFE Min | 20 |
| Lead Free | Lead Free |
| Length | 16.26mm |
| Max Collector Current | 16A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Power Dissipation | 200W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 4MHz |
| DC Rated Voltage | 250V |
| Width | 5.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MJW21196G Datasheet
Download the complete datasheet for Onsemi MJW21196G to view detailed technical specifications.
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