
N-channel Junction Field-Effect Transistor (JFET) in a 3-pin SOT-23 surface mount package. Features a continuous drain current of 20mA, a drain-to-source voltage (Vdss) of 35V, and a gate-to-source voltage (Vgs) of -35V. Offers a drain-to-source resistance of 30 Ohms and a maximum power dissipation of 350mW. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
Onsemi MMBFJ111 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 20mA |
| Current Rating | 20mA |
| Drain to Source Resistance | 30R |
| Drain to Source Voltage (Vdss) | 35V |
| Gate to Source Voltage (Vgs) | -35V |
| Height | 1.04mm |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 35V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBFJ111 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
