N-channel Junction Field-Effect Transistor (JFET) in a SOT-23 surface-mount package. Features a continuous drain current of 2mA, drain-to-source voltage (Vdss) up to 35V, and gate-to-source voltage (Vgs) down to -35V. Offers a drain-to-source resistance of 100 Ohms and a maximum power dissipation of 350mW. Operates across a temperature range of -55°C to 150°C. Packaged on tape and reel for automated assembly.
PackageSOT-23
Current Rating2mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi MMBFJ113 technical specifications.
General
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 2mA |
| Current Rating | 2mA |
| Drain to Source Resistance | 100R |
| Drain to Source Voltage (Vdss) | 35V |
| Gate to Source Voltage (Vgs) | -35V |
| Height | 0.93mm |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 35V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBFJ113 Datasheet
Download the complete datasheet for Onsemi MMBFJ113 to view detailed technical specifications.
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