ONSEMI

MMBFJ309

Onsemi

MMBFJ309

Name: MMBFJ309 Onsemi
Brand: Onsemi
SKU: MMBFJ309

RF FET N-CH 25V 30mA 450MHz SOT-23

N-channel RF FET transistor in SOT-23 package, designed for surface mounting. Features a 25V drain-to-source voltage (Vdss) and 30mA continuous drain current (ID). Operates at frequencies up to 450MHz with a gain of 12dB and a noise figure of 3dB. Maximum power dissipation is 350mW, with operating temperatures ranging from -55°C to 150°C. Packaged in tape and reel for automated assembly.

Frequency450MHz

PackageSOT-23

Voltage Rating25V

MountingSurface Mount

Quick Jump:

Technical Specifications

Onsemi MMBFJ309 technical specifications.

General

Package/Case	SOT-23
Continuous Drain Current (ID)	30mA
Drain to Source Voltage (Vdss)	25V
Frequency	450MHz
Gain	12dB
Gate to Source Voltage (Vgs)	-25V
Height	0.93mm
Lead Free	Lead Free
Length	2.92mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	350mW
Mount	Surface Mount
Noise Figure	3dB
Package Quantity	3000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	350mW
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Test Voltage	10V
Voltage Rating	25V
DC Rated Voltage	25V
Weight	0.03g
Width	1.3mm