
N-Channel RF FET transistor in SOT-23 package, designed for surface mount applications. Features a Drain to Source Voltage (Vdss) of 25V, continuous Drain Current (ID) of 60mA, and a maximum power dissipation of 350mW. Operates at frequencies up to 450MHz with a typical gain of 12dB and a noise figure of 3dB. This RoHS compliant component is supplied on tape and reel, with a minimum operating temperature of -55°C and a maximum of 150°C.
Onsemi MMBFJ310 technical specifications.
| Package/Case | SOT-23 |
| Continuous Drain Current (ID) | 60mA |
| Drain to Source Voltage (Vdss) | 25V |
| Frequency | 450MHz |
| Gain | 12dB |
| Gate to Source Voltage (Vgs) | -25V |
| Height | 0.93mm |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Noise Figure | 3dB |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Termination | SMD/SMT |
| Test Voltage | 10V |
| Voltage Rating | 25V |
| DC Rated Voltage | 25V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBFJ310 to view detailed technical specifications.
No datasheet is available for this part.
