NPN Bipolar Junction Transistor (BJT) in a SOT-23 package, designed for general-purpose amplification. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 45V. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C, with a power dissipation of 350mW. Packaged on a 15000-TAPE reel for surface mounting.
Frequency250MHz
PackageSOT-23
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBT100A technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Series | MMBT100A |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 45V |
| Weight | 0.03g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBT100A Datasheet
Download the complete datasheet for Onsemi MMBT100A to view detailed technical specifications.
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