
PNP Bipolar Junction Transistor (BJT) for surface mount applications in a SOT-23 package. Features a 45V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum DC current gain (hFE) of 300 and a transition frequency of 250MHz. Operates across a wide temperature range from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
Onsemi MMBT200A technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 250MHz |
| Gain Bandwidth Product | 250MHz |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MMBT200A |
| Transition Frequency | 250MHz |
| DC Rated Voltage | -45V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT200A to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
