The MMBT2131T1G is a PNP transistor with a collector-emitter breakdown voltage of 30V and a collector-emitter saturation voltage of 1V. It can handle a maximum collector current of 700mA and a maximum power dissipation of 342mW. The transistor is packaged in a SC package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSC
Current Rating-700mA
PolarityPNP
Power665mW
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Technical Specifications
Onsemi MMBT2131T1G technical specifications.
General
| Package/Case | SC |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | -700mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Max Collector Current | 700mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 342mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 665mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MMBT2131 |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT2131T1G Datasheet
Download the complete datasheet for Onsemi MMBT2131T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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