NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 30V collector-emitter voltage (VCEO) and a 600mA maximum collector current. This surface-mount component is housed in a SOT-23 package and offers a minimum DC current gain (hFE) of 100. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 350mW. Delivered on a 3000-piece tape and reel.
PackageSOT-23
Current Rating600mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi MMBT2222 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.6V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.6V |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Termination | SMD/SMT |
| Transition Frequency | 250MHz |
| DC Rated Voltage | 30V |
| Weight | 0.03g |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Onsemi MMBT2222 Datasheet
Download the complete datasheet for Onsemi MMBT2222 to view detailed technical specifications.
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