NPN bipolar junction transistor (BJT) in a SOT-416 package, offering a 40V collector-emitter breakdown voltage and a 600mA maximum collector current. Features a 300MHz transition frequency and a minimum hFE of 35. This RoHS compliant component operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 150mW. Packaged on tape and reel for automated assembly.
Frequency300MHz
PackageSOT-416
Current Rating600mA
PolarityNPN
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Technical Specifications
Onsemi MMBT2222ATT1G technical specifications.
General
| Package/Case | SOT-416 |
| Collector Base Voltage (VCBO) | 75V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 0.8mm |
| hFE Min | 35 |
| Lead Free | Lead Free |
| Length | 1.65mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 150mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 75V |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT2222ATT1G Datasheet
Download the complete datasheet for Onsemi MMBT2222ATT1G to view detailed technical specifications.
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