NPN bipolar junction transistor in a SOT-23-3 package. Features a 60V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a minimum hFE of 250 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C. Packaged in tape and reel for automated assembly.
Frequency1MHz
PackageSOT-23-3
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi MMBT2484LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 350mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 350mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 1.01mm |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 100mA |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 60V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT2484LT1G Datasheet
Download the complete datasheet for Onsemi MMBT2484LT1G to view detailed technical specifications.
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