PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 600mA. Offers a minimum DC current gain (hFE) of 75 and a transition frequency (fT) of 200MHz. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. Supplied on a 3000-piece tape and reel.
Frequency200MHz
PackageSOT-23-3
Current Rating-600mA
PolarityPNP
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Technical Specifications
Onsemi MMBT2907ALT1G technical specifications.
General
Package/Case
SOT-23-3
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
-60V
Collector Emitter Saturation Voltage
-1.6V
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
1.6V
Current Rating
-600mA
Emitter Base Voltage (VEBO)
5V
Frequency
200MHz
Gain Bandwidth Product
200MHz
Height
0.94mm
hFE Min
75
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
60V
Max Collector Current
600mA
Max Frequency
200MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
300mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
200MHz
Type
General Purpose
DC Rated Voltage
-60V
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBT2907ALT1G Datasheet
Download the complete datasheet for Onsemi MMBT2907ALT1G to view detailed technical specifications.
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