NPN bipolar junction transistor in a SOT-23-3 package. Features a collector-emitter breakdown voltage of 40V and a maximum collector current of 100mA. Offers a minimum DC current gain (hFE) of 75 and a gain bandwidth product of 75MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 225mW. This component is RoHS compliant and supplied on a 10000-piece tape and reel.
PackageSOT-23-3
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi MMBT3416LT3G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 4V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4V |
| Gain Bandwidth Product | 75MHz |
| Height | 1.11mm |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MMBT3416L |
| DC Rated Voltage | 25V |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT3416LT3G Datasheet
Download the complete datasheet for Onsemi MMBT3416LT3G to view detailed technical specifications.
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