PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a 25V Collector-Emitter Voltage (VCEO) and 25V Collector-Emitter Breakdown Voltage. Offers a maximum collector current of 800mA and a transition frequency of 100MHz. Minimum DC current gain (hFE) is 60. Operates within a temperature range of -55°C to 150°C with a power dissipation of 350mW.
Frequency100MHz
PackageSOT-23
Current Rating-800mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBT3702 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -800mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Max Collector Current | 800mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Series | MMBT3702 |
| Transition Frequency | 100MHz |
| DC Rated Voltage | -25V |
| Weight | 0.03g |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBT3702 Datasheet
Download the complete datasheet for Onsemi MMBT3702 to view detailed technical specifications.
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