NPN bipolar junction transistor in a SOT-23-3 package. Features a 40V collector-emitter voltage (VCEO) and a 60V collector-base voltage (VCBO). Offers a maximum continuous collector current of 200mA and a power dissipation of 300mW. Operates with a minimum DC current gain (hFE) of 40 and a transition frequency of 300MHz. Supplied on a 10,000-piece tape and reel.
Onsemi MMBT3904LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 200mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 300MHz |
| Gain Bandwidth Product | 300MHz |
| Height | 1.01mm |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 200mA |
| Max Frequency | 300MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 40V |
| Width | 1.4mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT3904LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
