NPN Bipolar Junction Transistor (BJT) in SOT-23 package, designed for surface mount applications. Features a maximum collector current of 200mA and a collector-emitter voltage of 25V. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 300MHz. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 350mW. Packaged on a 3000-piece tape and reel, this RoHS compliant component is lead-free.
Frequency300MHz
PackageSOT-23
Current Rating200mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBT4124 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
30V
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
25V
Collector-emitter Voltage-Max
300mV
Current Rating
200mA
Emitter Base Voltage (VEBO)
5V
Frequency
300MHz
Gain Bandwidth Product
300MHz
Height
0.93mm
hFE Min
120
Lead Free
Lead Free
Length
2.92mm
Max Breakdown Voltage
25V
Max Collector Current
200mA
Max Frequency
300MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
300MHz
DC Rated Voltage
25V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBT4124 Datasheet
Download the complete datasheet for Onsemi MMBT4124 to view detailed technical specifications.
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