NPN bipolar junction transistor (BJT) in SOT-23 package, designed for general-purpose amplification. Features a maximum collector current of 600mA and a collector-emitter voltage (VCEO) of 40V. Offers a minimum DC current gain (hFE) of 50 and a maximum collector-emitter saturation voltage of 750mV. Operates within a temperature range of -55°C to 150°C, with a power dissipation of 350mW. This surface-mount component is lead-free and RoHS compliant, supplied on a 3000-piece tape and reel.
PackageSOT-23
Current Rating600mA
MountingSurface Mount
PolarityNPN
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Technical Specifications
Onsemi MMBT4400 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Height | 0.93mm |
| hFE Min | 50 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 40V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT4400 Datasheet
Download the complete datasheet for Onsemi MMBT4400 to view detailed technical specifications.
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