PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 30 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 300mW. Supplied on a 10000-piece tape and reel.
Frequency200MHz
PackageSOT-23-3
Current Rating600mA
PolarityPNP
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Technical Specifications
Onsemi MMBT4403LT3 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -750mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 750mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 30 |
| Lead Free | Contains Lead |
| Max Collector Current | 600mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBT4403LT3 Datasheet
Download the complete datasheet for Onsemi MMBT4403LT3 to view detailed technical specifications.
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