PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 50V collector-emitter breakdown voltage and a 50V collector-base voltage. Offers a maximum collector current of 100mA and a minimum hFE of 250. Packaged in SOT-23 for surface mounting, this component operates within a temperature range of -55°C to 150°C and has a transition frequency of 40MHz. Supplied on a 3000-piece tape and reel.
Frequency40MHz
PackageSOT-23
Current Rating-100mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBT5087 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | -3V |
| Frequency | 40MHz |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 40MHz |
| DC Rated Voltage | -50V |
| Weight | 0.03g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT5087 Datasheet
Download the complete datasheet for Onsemi MMBT5087 to view detailed technical specifications.
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