NPN Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter voltage (VCEO) of 30V, collector current rating of 50mA, and a transition frequency of 50MHz. Offers a minimum DC current gain (hFE) of 300 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C.
Frequency50MHz
PackageSOT-23-3
Current Rating50A
PolarityNPN
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Technical Specifications
Onsemi MMBT5088LT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 35V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 50A |
| Emitter Base Voltage (VEBO) | 4.5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 300 |
| Lead Free | Contains Lead |
| Max Collector Current | 50mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBT5088LT1 Datasheet
Download the complete datasheet for Onsemi MMBT5088LT1 to view detailed technical specifications.
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