NPN RF BJT transistor in SOT-23 package for surface mount applications. Features a 12V collector-emitter voltage (VCEO), 50mA continuous collector current, and a 2GHz transition frequency. Offers a minimum gain (hFE) of 25 and a gain bandwidth product of 2GHz. Operates across a temperature range of -55°C to 150°C with a maximum power dissipation of 225mW. Packaged in tape and reel.
Frequency2GHz
PackageSOT-23
Current Rating50mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBT5179 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
20V
Collector Emitter Breakdown Voltage
12V
Collector Emitter Saturation Voltage
400mV
Collector Emitter Voltage (VCEO)
12V
Collector-emitter Voltage-Max
12V
Continuous Collector Current
50mA
Current Rating
50mA
Emitter Base Voltage (VEBO)
2.5V
Frequency
2GHz
Gain
15dB
Gain Bandwidth Product
2GHz
Height
0.93mm
hFE Min
25
Lead Free
Lead Free
Length
2.92mm
Max Breakdown Voltage
12V
Max Collector Current
50mA
Max Frequency
2GHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
225mW
Mount
Surface Mount
Number of Elements
1
Operating Frequency
2000 MHz
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
225mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
2GHz
DC Rated Voltage
12V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBT5179 Datasheet
Download the complete datasheet for Onsemi MMBT5179 to view detailed technical specifications.
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