NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 50V collector-emitter voltage (VCEO) and a 500mA maximum collector current. Operates with a minimum DC current gain (hFE) of 200 and a transition frequency of 30MHz. Packaged in a SOT-23 surface-mount case, this RoHS compliant component offers a wide operating temperature range from -55°C to 150°C.
Frequency30MHz
PackageSOT-23
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBT5210 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
700mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
700mV
Current Rating
500mA
Emitter Base Voltage (VEBO)
4.5V
Frequency
30MHz
Gain Bandwidth Product
30MHz
Height
0.93mm
hFE Min
200
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
50V
Max Collector Current
100mA
Max Frequency
30MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
30MHz
DC Rated Voltage
50V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBT5210 Datasheet
Download the complete datasheet for Onsemi MMBT5210 to view detailed technical specifications.
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