
NPN Epitaxial Silicon Transistor, 3000-REEL, designed for surface mount applications in a SOT-23 package. Features a maximum collector-emitter voltage of 140V, a continuous collector current of 600mA, and a transition frequency of 50MHz. Offers a minimum DC current gain (hFE) of 60 and a maximum power dissipation of 350mW. Operates across a wide temperature range from -55°C to 150°C, with a low collector-emitter saturation voltage of 250mV. This RoHS compliant component is lead-free.
Onsemi MMBT5550 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 160V |
| Collector Emitter Breakdown Voltage | 140V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 140V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | 600mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Height | 0.93mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 140V |
| Max Collector Current | 600mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 140V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT5550 to view detailed technical specifications.
No datasheet is available for this part.
