NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 45V collector-emitter voltage (VCEO) and a 100mA maximum collector current. Offers a high minimum DC current gain (hFE) of 600. Packaged in a SOT-23 surface-mount case, this lead-free and RoHS-compliant component operates from -55°C to 150°C with a maximum power dissipation of 350mW. Supplied on a 3000-piece tape and reel.
PackageSOT-23
Current Rating100mA
MountingSurface Mount
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi MMBT5962 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 45V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 45V |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 8V |
| Height | 0.93mm |
| hFE Min | 600 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 45V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT5962 Datasheet
Download the complete datasheet for Onsemi MMBT5962 to view detailed technical specifications.
No datasheet is available for this part.
Product Images
