The MMBT6427LT1 is a NPN transistor with a collector base voltage of 40V and a collector emitter breakdown voltage of 40V. It has a maximum collector current of 500mA and a maximum power dissipation of 225mW. The transistor is packaged in a SOT-23-3 case and is available in tape and reel packaging. It has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
PackageSOT-23-3
Current Rating500mA
PolarityNPN
Power225mW
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Technical Specifications
Onsemi MMBT6427LT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | 500mA |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 12V |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 10 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 225mW |
| RoHS Compliant | No |
| DC Rated Voltage | 40V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBT6427LT1 Datasheet
Download the complete datasheet for Onsemi MMBT6427LT1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.