NPN Bipolar Junction Transistor (BJT) in SOT-23 package. Features 50V Collector-Emitter Voltage (VCEO), 500mA Max Collector Current, and 700MHz Transition Frequency. Offers a minimum DC current gain (hFE) of 250 and a maximum power dissipation of 350mW. Operates across a temperature range of -55°C to 150°C. Surface mountable with tape and reel packaging.
Frequency700MHz
PackageSOT-23
Current Rating500mA
MountingSurface Mount
Quick Jump:
Technical Specifications
Onsemi MMBT6428 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
600mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
600mV
Current Rating
500mA
Emitter Base Voltage (VEBO)
5V
Frequency
700MHz
Gain Bandwidth Product
700MHz
Height
0.93mm
hFE Min
250
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
50V
Max Collector Current
500mA
Max Frequency
700MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Transition Frequency
700MHz
DC Rated Voltage
50V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBT6428 Datasheet
Download the complete datasheet for Onsemi MMBT6428 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.