NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 25V Collector-Emitter Voltage (VCEO) and a 500mA maximum collector current. Operates with a 100MHz maximum frequency and a 250 minimum hFE. Packaged in a SOT-23 surface-mount case, this component is RoHS compliant and supplied on a 3000-piece tape and reel.
Onsemi MMBT6515 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 25V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 4V |
| Height | 0.93mm |
| hFE Min | 250 |
| Lead Free | Lead Free |
| Length | 2.92mm |
| Max Breakdown Voltage | 25V |
| Max Collector Current | 200mA |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MMBT6515 |
| DC Rated Voltage | 25V |
| Weight | 0.03g |
| Width | 1.3mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBT6515 to view detailed technical specifications.
No datasheet is available for this part.
