NPN Bipolar Junction Transistor (BJT) for surface mount applications. Features a 350V collector-emitter voltage and 0.1A maximum DC collector current. This single-element silicon transistor offers 300mW maximum power dissipation and a 200MHz transition frequency. Housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads, it operates from -55°C to 150°C.
PackageSOT-23
MountingSurface Mount
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Technical Specifications
Onsemi MMBT6517L technical specifications.
General
| Basic Package Type | Lead-Frame SMT |
| Package Family Name | SOT |
| Package/Case | SOT-23 |
| Package Description | Small Outline Transistor |
| Lead Shape | Gull-wing |
| Pin Count | 3 |
| PCB | 3 |
| Package Length (mm) | 2.9 |
| Package Width (mm) | 1.3 |
| Package Height (mm) | 0.94 |
| Seated Plane Height (mm) | 1 |
| Pin Pitch (mm) | 0.95 |
| Package Material | Plastic |
| Mounting | Surface Mount |
| Jedec | TO-236AB |
| Type | NPN |
| Configuration | Single |
| Number of Elements per Chip | 1 |
| Maximum Collector Base Voltage | 350V |
| Maximum Emitter Base Voltage | 5V |
| Maximum Collector-Emitter Voltage | 350V |
| Maximum DC Collector Current | 0.1A |
| Maximum Power Dissipation | 300mW |
| Material | Si |
| Minimum DC Current Gain | [email protected]@10V|30@10mA@10V|30@30mA@10V|20@50mA@10V|15@100mA@10V |
| Maximum Transition Frequency | 200MHz |
| Category | Bipolar Small Signal |
| Min Operating Temperature | -55°C |
| Max Operating Temperature | 150°C |
Compliance
| Cage Code | 5V1P1 |
| EU RoHS | No |
| HTS Code | 8541210075 |
| Schedule B | 8541210080 |
| ECCN | EAR99 |
| Automotive | No |
| AEC Qualified | No |
| PPAP | No |
| Radiation Hardening | No |
| RoHS Versions | 2011/65/EU, 2015/863 |
Datasheet
Onsemi MMBT6517L Datasheet
Download the complete datasheet for Onsemi MMBT6517L to view detailed technical specifications.
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