PNP Bipolar Junction Transistor in SOT-23-3 package. Features a collector-emitter voltage of 350V and a maximum collector current of 500mA. Offers a transition frequency of 200MHz and a minimum hFE of 20. Operates across a temperature range of -55°C to 150°C with a power dissipation of 300mW. Supplied on a 3000-piece tape and reel.
Frequency200MHz
PackageSOT-23-3
Current Rating-500mA
PolarityPNP
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Technical Specifications
Onsemi MMBT6520LT1 technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -350V |
| Collector Emitter Breakdown Voltage | 350V |
| Collector Emitter Saturation Voltage | -1V |
| Collector Emitter Voltage (VCEO) | 350V |
| Collector-emitter Voltage-Max | 1V |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 200MHz |
| Gain Bandwidth Product | 200MHz |
| hFE Min | 20 |
| Lead Free | Contains Lead |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| RoHS Compliant | No |
| Transition Frequency | 200MHz |
| DC Rated Voltage | -350V |
Compliance
| RoHS | Not Compliant |
Datasheet
Onsemi MMBT6520LT1 Datasheet
Download the complete datasheet for Onsemi MMBT6520LT1 to view detailed technical specifications.
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