The MMBT6521LT1G is a small signal NPN transistor with a collector-emitter breakdown voltage of 25V and a collector-emitter saturation voltage of 500mV. It has a maximum collector current of 100mA and a maximum power dissipation of 225mW. The transistor is packaged in a SOT-23-3 package and is lead free and RoHS compliant. It operates over a temperature range of -55°C to 150°C.
PackageSOT-23-3
Current Rating100mA
PolarityNPN
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Technical Specifications
Onsemi MMBT6521LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 25V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector-emitter Voltage-Max | 25V |
| Current Rating | 100mA |
| Emitter Base Voltage (VEBO) | 4V |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | MMBT6521L |
| DC Rated Voltage | 25V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT6521LT1G Datasheet
Download the complete datasheet for Onsemi MMBT6521LT1G to view detailed technical specifications.
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