NPN Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features 80V collector-emitter breakdown voltage (VCEO) and 80V collector-base breakdown voltage (VCBO). Offers a maximum collector current of 500mA and a saturation voltage (VCE(sat)) of 400mV. Operates with a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 150MHz. Designed for a wide operating temperature range from -55°C to 150°C, with a power dissipation of 225mW. Supplied on a 3000-piece tape and reel.
Frequency150MHz
PackageSOT-23-3
Current Rating500mA
PolarityNPN
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Technical Specifications
Onsemi MMBT8099LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 400mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Collector-emitter Voltage-Max | 400mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 150MHz |
| Gain Bandwidth Product | 150MHz |
| Height | 1.01mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 500mA |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| DC Rated Voltage | 80V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBT8099LT1G Datasheet
Download the complete datasheet for Onsemi MMBT8099LT1G to view detailed technical specifications.
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