NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. Operates with a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a SOT-23 surface-mount case, supplied on a 3000-piece tape and reel. RoHS compliant with a maximum power dissipation of 350mW.
Frequency100MHz
PackageSOT-23
Current Rating500mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBTA05 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Current Rating
500mA
Emitter Base Voltage (VEBO)
4V
Frequency
100MHz
Gain Bandwidth Product
100MHz
Height
0.93mm
hFE Min
100
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Frequency
100MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
3000
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
350mW
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
100MHz
DC Rated Voltage
60V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBTA05 Datasheet
Download the complete datasheet for Onsemi MMBTA05 to view detailed technical specifications.
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