NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-23 package. Features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency (fT) of 50MHz. Maximum power dissipation is 240mW, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
Frequency50MHz
PackageSOT-23
Voltage300V
Current500mA
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Technical Specifications
Onsemi MMBTA42 technical specifications.
General
Case Code (Imperial)
2512
Case Code (Metric)
6432
Package/Case
SOT-23
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
500mV
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
500mV
Current
500mA
Current Rating
500mA
Emitter Base Voltage (VEBO)
6V
Frequency
50MHz
Gain Bandwidth Product
50MHz
hFE Min
40
Lead Free
Lead Free
Max Breakdown Voltage
300V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
240mW
Mount
Surface Mount
Number of Elements
1
Number of Terminations
2
Package Quantity
1
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
240mW
Radiation Hardening
No
Reach SVHC Compliant
No
Resistance
120R
RoHS Compliant
Yes
Series
CRGP
Tolerance
1%
Transition Frequency
50MHz
Voltage
300V
DC Rated Voltage
300V
Weight
0.002116oz
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBTA42 Datasheet
Download the complete datasheet for Onsemi MMBTA42 to view detailed technical specifications.
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