
High voltage NPN bipolar junction transistor in a SOT-23-3 package. Features a 300V collector-emitter breakdown voltage and 500mA continuous collector current. Offers a minimum DC current gain (hFE) of 25 and a transition frequency of 50MHz. Operates across a wide temperature range from -55°C to 150°C. Supplied on a 10000-piece tape and reel, this RoHS compliant component is lead-free.
Onsemi MMBTA42LT3G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | 500mA |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 10000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | 300V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBTA42LT3G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
