PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 50MHz. Packaged in a compact SOT-23 surface-mount case, this RoHS-compliant component operates from -55°C to 150°C with a power dissipation of 350mW.
Frequency50MHz
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBTA55 technical specifications.
General
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -60V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | 250mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 250mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -4V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 0.93mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 350mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -60V |
| Weight | 0.03g |
| Width | 1.3mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBTA55 Datasheet
Download the complete datasheet for Onsemi MMBTA55 to view detailed technical specifications.
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