PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 50MHz. Packaged in a compact SOT-23 surface-mount case, this RoHS-compliant component operates from -55°C to 150°C with a power dissipation of 350mW.
Frequency50MHz
PackageSOT-23
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBTA55 technical specifications.
General
Package/Case
SOT-23
Collector Base Voltage (VCBO)
-60V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
250mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
250mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
-4V
Frequency
50MHz
Gain Bandwidth Product
50MHz
Height
0.93mm
hFE Min
100
Lead Free
Lead Free
Length
2.9mm
Max Breakdown Voltage
60V
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
350mW
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
PNP
Power Dissipation
350mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-60V
Weight
0.03g
Width
1.3mm
Compliance
RoHS
Compliant
Datasheet
Onsemi MMBTA55 Datasheet
Download the complete datasheet for Onsemi MMBTA55 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.