PNP Darlington Bipolar Junction Transistor (BJT) in a SOT-23-3 package. Features a 30V collector-emitter breakdown voltage (VCEO) and a continuous collector current of -500mA. Offers a minimum DC current gain (hFE) of 5000 and a transition frequency of 125MHz. Maximum power dissipation is 225mW, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
PackageSOT-23-3
Current Rating-500mA
PolarityPNP
Power225mW
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Technical Specifications
Onsemi MMBTA63LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 1.5V |
| Continuous Collector Current | -500mA |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 10V |
| Halogen Free | Halogen Free |
| Height | 1.01mm |
| hFE Min | 5000 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 225mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 125MHz |
| DC Rated Voltage | -30V |
| Width | 1.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBTA63LT1G Datasheet
Download the complete datasheet for Onsemi MMBTA63LT1G to view detailed technical specifications.
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