PNP Bipolar Junction Transistor in a SOT-23-3 package. Features a collector-emitter breakdown voltage of 40V, continuous collector current of -100mA, and a transition frequency of 125MHz. Offers a minimum hFE of 40 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C and is RoHS compliant.
Frequency125MHz
PackageSOT-23-3
Current Rating-100mA
PolarityPNP
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Technical Specifications
Onsemi MMBTA70LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -4V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -250mV |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| Emitter Base Voltage (VEBO) | 4V |
| Frequency | 125MHz |
| Gain Bandwidth Product | 125MHz |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MMBTA70L |
| Transition Frequency | 125MHz |
| DC Rated Voltage | -40V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBTA70LT1G Datasheet
Download the complete datasheet for Onsemi MMBTA70LT1G to view detailed technical specifications.
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