
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a 300V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum hFE of 40 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
Onsemi MMBTA92 technical specifications.
| Package/Case | SOT-23 |
| Collector Base Voltage (VCBO) | -300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Voltage (VCEO) | -300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | -5V |
| hFE Min | 40 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 350mW |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
| Weight | 0.03g |
| RoHS | Compliant |
Download the complete datasheet for Onsemi MMBTA92 to view detailed technical specifications.
No datasheet is available for this part.
