PNP Bipolar Junction Transistor in SOT-23-3 package. Features a collector-emitter breakdown voltage of -300V, a maximum collector current of 500mA, and a transition frequency of 50MHz. Offers a minimum DC current gain (hFE) of 25 and a maximum power dissipation of 300mW. Operates across a temperature range of -55°C to 150°C. Supplied on a 3000-piece tape and reel.
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| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | -300V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| Height | 0.94mm |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Length | 2.9mm |
| Max Breakdown Voltage | 300V |
| Max Collector Current | 500mA |
| Max Frequency | 50MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -300V |
| Width | 1.3mm |
| RoHS | Compliant |
These are design resources that include the Onsemi MMBTA92LT1G
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