PNP Bipolar Junction Transistor (BJT) in a SOT-23-3 surface mount package. Features a 200V Collector-Emitter Breakdown Voltage and 200V Collector-Emitter Voltage (VCEO). Offers a maximum collector current of -500mA and a minimum hFE of 25. Operates with a transition frequency of 50MHz and a maximum power dissipation of 300mW. Suitable for applications requiring high voltage switching and amplification.
Frequency50MHz
PackageSOT-23-3
Current Rating-500mA
MountingSurface Mount
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Technical Specifications
Onsemi MMBTA93LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -200V |
| Collector Emitter Breakdown Voltage | 200V |
| Collector Emitter Saturation Voltage | -500mV |
| Collector Emitter Voltage (VCEO) | 200V |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -500mA |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 50MHz |
| Gain Bandwidth Product | 50MHz |
| hFE Min | 25 |
| Lead Free | Lead Free |
| Max Collector Current | 250nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 300mW |
| RoHS Compliant | Yes |
| Transition Frequency | 50MHz |
| DC Rated Voltage | -200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi MMBTA93LT1G Datasheet
Download the complete datasheet for Onsemi MMBTA93LT1G to view detailed technical specifications.
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